INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY)

Optimized metal wires to resist electromigration or resistance techniques for their production and design methods are described. The method involves depositing metal material within openings and on a surface of dielectric material, which results in metal filled openings and a topography of recessed regions aligned with the metal filled openings. Additionally, the method involves the deposit of an alloying material over the top of the material. This includes the recessed areas. The method further includes planarizing the material while leaving the alloying material within the recessive areas. The method further includes diffusing the alloying materials into the metal material, forming areas of alloy that are self-aligned to the metal filled openings.

Electromigration is the term used to describe the movement of ions in conductors as a result of the transfer of momentum between diffusing metal atoms and conducting electrons. This effect is crucial for applications that require large directcurrent density for example, microelectronics or related structures. Additionally, as the size of the integrated circuits (ICs) decreases the importance of this effect increases.

There are two types of failure in electromigration of via interconnects and wiring structures within dual damascene copper structures: (i) through depletion and (ii) line depletion. Via depletion occurs the case when electrons flow through the wiring line to the via interconnect above. This type of configuration requires that copper diffusion through the copper cap interface above a via interconnect be slowed down. Line depletion is the reverse. It occurs when electrons flow down from the via interconnect down to the wiring line below. This type of wiring demands that the copper diffusion below the via interconnect slow down. When taking these various modes into account, a need for a particular wire could be driven by performance or electromigration, butthe resistance of all of the wiring will be defined by the electromigration requirements of the worst-case electromigration.

The process of depositing the metal material into openings on a surface composed of dielectric material results in openings that are filled with metal. The topography of areas that are recessed is aligned to the openings that are filled with metal. Themethod further includes depositing an alloying material on top of the metal material, including in the recessed areas. Planarizing the metal material and leaving the alloying material in recess areas is an additional part of the procedure. Furthermore, the procedure involves the distribution of the alloying material inside the metal material to form areas that are self-aligned with metal filled openings.

A structure could comprise a plurality via interconnects or wiring designs made of a dielectric substance. The via interconnects and wiring structure are copper lined structures having an unplanar surface covered by a capping layer and self-aligned alloying regions the via interconnects and wiring structures under the capping layer that inhibit electromigration.

In one aspect of the invention an approach includes: determining whether metal lines require resistance to electromigration and assigning a form to the lines of metal that need electromigration resistance; constructing an image of the desired shape; and determining the timing for the chosen shape of the lines made of metal.

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