Infineon Technologies AG (Neubiberg, DE)

A method for forming the semiconductor device involves carrying the anodic oxidation procedure of the surface of a semiconductor substrate in order to form an oxide layer at the surface of the substrate by generating an attracting electric field between the semiconductor substrate and an electrode in an electrolyte. The electrode is used to draw in oxidizing ions of the electrolyte. This causes an oxidation of the surface of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the substrate of the semiconductor is within an electrolyte.

In the production of semiconductor devices, a vast variety of materials and processes are employed. In many cases, the semiconductor device’s electrically conductive parts must be electrically isolated from any other electricallyconductive parts. The maximum allowed voltages and the life expectancy of the semiconductor device are heavily dependent on the quality and size of the electrically insulating components of the device. It is important to improve the longevity and/or the maximum allowable voltages for semiconductor devices.

A method for creating the semiconductor device is explained in various embodiments. This process involves an aniodic oxide layering on the surface of a semiconductor substrate order to create an oxide layer over the surface of the substrate. The external electrode is placed in an electrolyte. It creates an attracting electric field that attracts electrons that are oxidizing to the substrate.

Further embodiments relate to a method of forming a semiconductor device. The method comprising carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at the surface of the semiconductorsubstrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte causing an oxidation of the surface region of the semiconductorsubstrate. The method also involves stimulating anodic oxidation, without the using an electric attracting field.

A method of creating an electronic device is one example. The method involves creating at least one pn junction inside the semiconductor substrate. The method also involves an aniodic oxygenation of the substrate’s surface , resulting in an oxide layer. This is accomplished by creating an attracting electric field between the substrate and the electrode within an electrolyte. This attracts the ions that are oxidizing to the electrolyte, which causes an oxidation of the substrate’s surface. A large voltage variation at the junction is because of the electric field. Additionally, the method comprises implanting dopants in the p-region or the n-region of pn-junction reducing a blocking voltage at the pn-junction to a level below the high voltage difference at the pn-junction during the anodic oxygenation.

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