INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (Seoul, KR)

The present invention offers a method and apparatus that allows the production of high-density wires both on the surface and inside the pores of porous materials.

There is also a method and apparatus capable of synthesizing nanowires in the shape of wires instead of a film not just in the surface of the porous material but also in the pores of the porous material.

There is also an apparatus and method of synthesizing wires and controlling the structure of wires that are made on the surface and within the pores of porous material.

In a particular aspect of the invention it is provided a method of synthesizing nanowires that includes the following steps of: disposing a covering inside the reaction furnace so that the cover is set from one another by a predetermined distance from a substrate that is utilized for the synthesis of nanowires heating the reaction furnace and synthesising nanowires by allowing a source gas to be put on the substrate, while flowing through the space between the covering and the substrate.

A specific embodiment of the invention permits the cover to be separated using a specified gap the substrate where nanowires will be created.

The substrate may be porous.

Nanowires can form not only on the surface of the porous substrate but as well in the pores within the porous substrate.

The shape of nanowires when they are created can differ based on a size of the gap between the surface and the cover.

The nanowires forming on the substrate may have a clearer shape as the size of the gap diminishes.

The gap between the cover and the substrate may be preset depending on design criteria.

A cover can be connected to a dispersing device to dislodge the cover. The distance between the substrate and the covering can be controlled by a control unit.

The method of creating nanowires on a substrate is another aspect of the invention. The apparatus comprises an deposition chamber that executes a process of depositing the desired material onto a substrate placed on a mounting piece and an apparatus for gas supply that feeds a reactant gas into the chamber for deposition. The gas feed system includes a reactant source connected to the deposition chamber the reactant source supplying the necessary reactant to deposition within the deposition chamber, and an energy source for the carrier gas that is connected to the deposition chamber and the reactant source the source of the carrier gas is a source of a carrier gas that carries the reactant into the deposition chamber. A reaction furnace could be incorporated into the deposition chamber. It can operate at high temperatures and in vacuum. The furnace’s first end is linked to the source of reaction and to the gas source for the carrier. The other end is connected by a vacuum pump to the furnace. Heating elements can be placed on top of the reaction stove. The heating element is designed to heat the furnace. The reaction furnace is comprised of a substrate for the production of nanowires and a covering. The covering is spaced apart by a predetermined distance away from the substrate. The reaction chamber contains a gas from the source of the reactant which is then deposited on the substrate. It moves across the gap between substrateand the covering, and then synthesizes nanowires.

According to an embodiment of the present invention, the covering can be separated apart using a predetermined gap from the surface of the substrate upon which nanowires will be made.

The substrate may be porous.

Nanowires are formed on porous substrates, but also within porous substrates.

The space between the cover and substrate can alter the shape of the nanowires.

The nanowires that are formed on the substrate may have a clearer shape when this gap decreases.

Depending on the design criteria, the gap between the substrate and the covering can be predetermined.

Additional components may be included in the apparatus for example, an displacing device which is attached to the covering and can move the covering. A control unit controls the movement of the controlling means. The gap between the substrate and covering is adjustable by controlling the displacement of the displacing mechanism using the control unit.

According to the present invention, the covering is disposed inside the nanowire-synthesizing tube by a predetermined gap from the substrate. As the gap closes the source gases reactant flow is slowed. This consequentlyforms a vortex flow, in which nanowires are formed on the surface and in the pores on the substrate. The simple structure of the cover permits for the formation of nanowires with high density both on the surface of the substrate as well as inside the pores.

The methods and apparatuses of the present invention possess different advantages and characteristics that are evident from, or are more clearly described in the accompanying drawings, that are included in this document as well as in the DetailedDescription of the Invention that help to clarify certain principles of the invention.

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