Silicon Genesis Corporation (San Jose, CA)
What is a Patent for Edge region and method using particles that are co-implanted for layer transfer processes
The invention described hereinabove relates to the manufacture of substrates. In particular the invention offers an approach that includes a method and a structure for forming multi-layered substrate structures for the production of the substrates used for semiconductor integrated circuit devices with co-implant or layer transfer techniques. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other types of substrates for three-dimensional packagingof integrated semiconductor devices, photonic devices, piezoelectronic devices, flat panel displays, microelectromechanical systems (“MEMS”), nano-technology structures, sensors, actuators, solar cells, biological and biomedical devices, and the like.
From the very early days humans have been creating useful items, tools, or devices using less useful materials for a long time. The articles can be constructed by using smaller components or blocks. In other cases, less useful items are divided into smaller pieces in order to enhance their utility. A common example of these articles to be separated include substrates, like glass plates, diamond and a semiconductor substrate a flat panel display, andothers. The substrates are typically cleaved or separated using different methods. In certain instances substrates are separated with a saw. A saw operation uses the use of a rotating blade or tool to cut through the substrate. This allows for two-part separation. This technique, however, is usually extremely “rough” and should not be employed to provide precise cuts in the substrate to aid in the production of fine tools andassemblies. In addition, the saw process frequently has difficulty in separating or cutting extremely tough or brittle substances, like glass or diamond. Also, the saw process is not suitable for the manufacture of microelectronic devices,including integrated circuit devices and other similar devices.
Accordingly, techniques have been developed to fabricate microelectronic devices, commonly called semiconductor integrated circuits. These circuits are usually made with the “planar method” which was invented in the beginning of semiconductor manufacturing. An example of one of the first semiconductor processes is provided in U.S. Pat. No. 2,981,877, in the name of Robert Noyce who has been acknowledged as one of the founders of the integrated circuit. The integrated circuit has evolved from a few electronic components into millions, and sometimes billions of components that are fabricated on tiny pieces of silicon material. Such integrated circuits have been integrated into and control a variety of today’sdevices, such as cell phones, computers, toys, automobiles as well as all sorts of medical equipment.
Traditional integrated circuits provide efficiency and sophistication that are much more than what was originally imagined. In order to improve in circuit density and complexity (i.e. the amount of devices capable of being placed on a chip), the size of the smallest device feature, which is also known as the device “geometry”, has become smaller with each generation of integrated circuits. Increasing the density of circuits has not just increased the performance and complexity of integratedcircuits but has additionally provided cheaper components to consumers.
Making devices smaller is difficult, since each of the processes employed in integrated fabrication comes with a limit. The process used can only be reduced to a particular dimension for the feature. If that happens it is either the process or the layout of the device must be changed. Additionally, as devices require more efficient and faster designs, there are process limitations for certain techniques and materials. A good example of such a method is the ability to make the thickness of the substrate less after the manufacture of the integrated circuit devices on top. Back grinding is an old method to thin these layers. It’s a hassle and is susceptible to failure of the device. Despite major advances, back grinding still has numerous limitations.
Certain techniques were developed to remove a thin layer of crystalline material from a larger portion of the substrate used for donation. These techniques are commonly known as “layer transfer” techniques. The techniques for layer transfer can be used to fabricate of specific substrate structures, such as silicon on display or insulator substrates. Francois J. Henney and Nathan Chung developed a revolutionary technique to cleave materials. This technique was disclosed in U.S. Pat. No. 6,013,563 titled Controlled Cleaving Process, assigned to Silicon Genesis Corporation of San Jose, Calif., and hereby incorporated as a reference for all purposes. While this technique has proven successful but there is an urge for better methods of manufacturing multilayered structures.
It is clear that huge substrates can be produced in a cost-effective and efficient way.Click here to view the patent on USPTO website.
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- What is the structure of the invention? What is the physical constitution?
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- What are technical terms and keywords that describe the characteristics of an invention? A technical dictionary will help you locate the right words.
2. Use these terms to search for relevant Cooperative Patent Classifications at the Classification Text Search Tool. To find the most appropriate classification to your invention, go through the classification’s class Schemes (class schedules). Consider substituting the words you’re using to describe your invention if you don’t find any results in your Classification Text Search with synonyms such as the terms you used in the first step.
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To review your search, you can hire a registered patent attorney to assist. A preliminary search will help one better prepare to talk about their invention and other related inventions with a professional patent attorney. In addition, the attorney will not spend too much time or money on patenting basics.