Samsung Electronics Co., Ltd. (Gyeonggi-do, KR)
What is a Patent for Semiconductor memory device that has a shaped electrode and method of manufacturing it
Search Patent for Semiconductor memory device that has a shaped electrode and method of manufacturing it
1. Field
Ingenious concepts pertain to a semiconductor memory device and/or methods for fabricating the same, and more particularly to a three-dimensional semiconductor memory device that has improved electrical characteristics and/or a method for fabricating the identical.
2. Description of Related Art
A greater degree of integration between semiconductor elements could be needed to ensure a satisfactory efficiency and lower costs for consumers. An increase in density is possible with semiconductor elements. The degree of integration may be a major factor determining the price of the product.
In the case of a traditional two-dimensional semiconductor element because the degree of integration is determined by the area occupied by a unit memory cell, it is heavily affected by the quality of technology used in the process of creating fine patterns. The use of costly equipment to reduce the size of patterns has led to an increase in the integration of two-dimensional semiconductor elements. But, it’s still feasible to attain an increased degree of integration. Therefore, three-dimensional semiconductor memory elements that include memory cells that are designed three-dimensionally are being considered.
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