SAMSUNG ELECTRONICS CO., LTD. (Suwon-si, KR)

Nonvolatile memory device comprising a mold structure with multiple gate electrodes on a substrate. The channel structure penetrates the mold structure and connects each gate electrode. A first cutting area cuts each gate electrode. a second-cutting region is separated from the primary region in the direction of each gate electrode; a cutting line cut the first string line in between first and second cutting regions while cutting lines cut the second line of string between first and second cutting regions and a cutting line cuts the third line

1. Field

Embodiments are a type of non-volatile storage device and the method of fabricating it.

2. Description of the Related Art

A semiconductor memory device could be broadly classified into volatile and nonvolatile.

The level of integration for the nonvolatile memory device is growing to ensure high performance and cost requirements by the consumer. The size of unit memory cells determines the level of integration in a two-dimensional or planar memory device. Recently an advanced three-dimensional memory device where units memory cells are arranged vertically has been designed.

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