Samsung Electronics Co., Ltd. (Gyeonggi-do, KR)
What is a Patent for Image sensor and method of manufacturing the identical
Search Patent for Image sensor and method of manufacturing the identical
The innovative concepts are an image sensor, as well as manufacturing methods for it, specifically an image sensor which incorporates an organic photoelectric conversion layer, and manufacturing techniques to make the same.
An image sensor may convert an optical image into electrical signals. Image sensors may be categorized as a charge coupled device (CCD) image sensors or complementary metal-oxide-semiconductor (CMOS) image sensors (CIS). A CIS can include a plurality of pixels, arranged in a two-dimensional fashion. Each of, or at least one the pixels could be equipped with a photodiode. The photodiode may be configured to convert light incident on it into electrical signals.
Images that include innovative ideas could be used to create an image sensor capable of increasing the density of integration.
Designs that incorporate inventive ideas could also be used to create a method for creating an image sensor that has higher connectivity density.
According to an example embodiment, an image sensor may include a substrate having a first surface and a second surface opposite to the first surface, a first floating diffusion region in the substrate, the first floating diffusion regionadjacent to the first surface, a through-electrode in the substrate, the through-electrode electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrodesequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure, the top contact plug connecting the bottom electrode to the through-electrode.
In accordance with an example, an image sensor may include a substrate having a first surface and a second opposite one another the first surface, the substrate having pixels that extend in a first direction. the first and second deep device isolation patterns on the substrate, and the first and second deep device isolation patterns containing first and second extensions extending in the direction of first, respectively with the first and second extensions separated from each other, and having pixels therebetween, through-electrodes in the substrate, and the through-electrodes between the pixel regions when seen in a plan view, an insulation structure and a photoelectric layer, and a top electrode, sequentially provided on the second surface bottom electrodes that connect the insulating structure as well as the photoelectric conversion layer, top contact plugs in the insulating structure to connect the electrodes at the bottom to the through-electrodes and color filters buried in the insulation structure.
A typical process for making an image sensor is to provide an image sensor substrate that has a first and a second surface, which are opposite each other, and creating an electrode through the substrate, then forming an insulation layer on the second side. The top plug is connected to the through-electrode. A color filter is then embedded within the insulating layers. Then, you can sequentially create a bottom electrode and an electrical conversion layer. The top electrode is connected to the bottom.
An example embodiment of an CMOS sensor includes the substrate having an initial and second surface. The transfer gate is located on the substrate’s first surface. A micro lens is situated on the second surface of the substrate. There may also be an through-electrode in the substrate. The through-electrode extends from the substrate’s first surface up to the second surface of the substrate. It can include doped polysilicon.
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