Nanotechnology – Jin Jang, Suk-jae Chung, Sung-hoon Lim, Jae-eun Yoo, IJIN NANOTECH Co Ltd, Iljin Nanotech Co Ltd
Abstract for “Field emitter with carbon nanotube film, process of fabricating it, and field emission device using the emitter.”
A field emitter with a high current density at low voltages using a carbon-nanotube film is provided. The method of manufacturing the same and a field emission device comprising the field emitter are described. A thin film transistor is formed on an insulating substrate. The thin film transistor has a semiconductor layer, a drain electrode, and a source electrode. An electron emitting unit is formed from a carbon nanotube on the drain electrode. A portion of the drain electrode that contacts the carbon nanotube films contains catalytic metallic, such as nickel and cobalt. Alternately, the drain electrode can be made of catalytic material for carbon nanotube growth.
Background for “Field emitter with carbon nanotube film, process of fabricating it, and field emission device using the emitter.”
“1. “1.
“The invention concerns a field emitter with a carbon-nanotube film and a method for fabricating it, as well as a field emission device using the emitter. More specifically, the invention pertains to afield emitter with a carbon-nanotube film for use in an electron emitting unit. A method of fabricating and using the field emitter.
“2. “2.
“Field emission displays, currently being studied as a next generation flat display device, are based upon the emission of electrons within a vacuum. They emit light by electrons emitted at micron-sized tips in strong electric fields, accelerating, colliding with fluorescent materials. Field emission displays are light and thin with high brightness and resolution.
Conventional electron emitters used for field emission display devices are made from silicon or metal tips. However, they have complex structures and provide a nonuniform current density between the pixels. A metal oxide semiconductor field effect transistor can be used to act as an active circuit for each unit of pixels. This is described in the paper by S. Kanemaru and colleagues,?Active Matrix, Si Field Emitters Driven By Built-in MOSFETS?, IDW?97, pp 735-738, 1997. Also, a thin film transistor can be used as an active circuit for each unit pixel in order to solve the above drawbacks, which is disclosed in the paper by H. Gamo et al., ?Actively-Controllable Field Emitter Arrays with Built-in Thin-Film Transistors on Glass for Active-Matrix FED Applications?, IDW’98, pp 66-770, 1998. The structures described in these papers are made more complex by adding processes to the fabrication of an existing field emission device.
“The present invention aims to provide a field emitter with a high current density at low voltages using a carbon nanotube material.
“Another objective is the present invention to provide a method for manufacturing a field emitter with a carbon nanotube films through a simple process.”
“Another objective of the present invention” is to provide a field emission device with a field emitter that has a high current density, even at low voltages using a carbon nanotube movie.
“The present invention provides a field emission device having a carbon nanotube layer. It also includes an insulating substrate and a thin film transistor. The thin film transistor has a semiconductor layer, drain electrode, and gate electrode.
“And an electron emitting unit made of a carbon-nanotube film at the drain is electrode for the thin film transistor.”
The semiconductor layer of a thin film transistor may be either a polycrystalline silicon silicon layer or an organic silicon layer. A thin film transistor could be either a coplanar-type transistor or a stagger type transistor.
“The drain electrode’s surface is intended to touch the carbon nanotube film. It contains catalytic metallic, which is a transition metal such as nickel and cobalt for growth of carbon nanotubes. The drain electrode can also be made of catalytic material for growing carbon nanotubes.
“The second objective is achieved by the present invention. The method of fabricating a field emitter with a carbon nanotube films, according to the present invention, includes:
The steps of creating a thin-film transistor consist of a semiconductor substrate, a source electrode and drain electrode. After etching the protective film, remove the remaining protective film. Next, form a semiconductor substrate layer. Form a source and drain electrode patterns that are separated by a predetermined distance on the semiconductor substrate. Finally, create a gate electro pattern between the source and drain electrode patterns. This gate electrode pattern consists of a gate insulation film and agate electrode. The step of making a thin film transistor is an inverse stagger-type transistor. It includes substeps such as: creating a source and drain electrode patterns that are separated by a predetermined distance on the insulating substrate; creating a semiconductor layer pattern that extends a predetermined length along the sides and filling the space between them; and finally, forming a pattern for a gate electrode consisting of a a gate insulating and gate electrode on the semiconductor pattern between the drain electrode and source electrode. The step of making a thin film transistor that is an inverse stagger type transistor involves the following substeps: Forming a gate-type electrode pattern, consisting of a source electrode and a barrier insulating film on the insulating substrate, and covering the gate electrode with a semiconductor layer. Finally, forming a source and drain electrode patterns on the semiconductor layer pattern.
The step of creating a carbon nanotube layer on the exposed part of the drain electro can be done by either coating the exposed area with a carbon-nanotube film that has been grown or directly growing the carbon Nanotube film on to the surface. The method also includes the formation of a catalytic layer to allow carbon nanotube growth on a portion that contacts the carbon nanotube films. The catalytic metal layer can be formed in the process of forming a thin film transistor, or after etching a portion of the protective insulation film.
The present invention is a field emission device that achieves the third objective. It includes a field emitting display device where unit pixels are defined by a plurality gate lines and a plurality data lines that cross at right angles. Each unit pixel also includes: A thin film transistor formed on an ininsulating substrate. The thin film transistor has a semiconductor layer, source electrode, and drain electrode. An upper electrode opposite the insulating substrate. A fluorescent material is formed on the bottom electrode.
“The present invention uses a carbon nanotube movie as an electron emitting unit for a field emission device. This allows for a simple manufacturing process to create a field emitter with a high current density at low voltages. Because it is driven by a thin-film transistor, a field emission display device with a uniform current density can be realized.
Summary for “Field emitter with carbon nanotube film, process of fabricating it, and field emission device using the emitter.”
“1. “1.
“The invention concerns a field emitter with a carbon-nanotube film and a method for fabricating it, as well as a field emission device using the emitter. More specifically, the invention pertains to afield emitter with a carbon-nanotube film for use in an electron emitting unit. A method of fabricating and using the field emitter.
“2. “2.
“Field emission displays, currently being studied as a next generation flat display device, are based upon the emission of electrons within a vacuum. They emit light by electrons emitted at micron-sized tips in strong electric fields, accelerating, colliding with fluorescent materials. Field emission displays are light and thin with high brightness and resolution.
Conventional electron emitters used for field emission display devices are made from silicon or metal tips. However, they have complex structures and provide a nonuniform current density between the pixels. A metal oxide semiconductor field effect transistor can be used to act as an active circuit for each unit of pixels. This is described in the paper by S. Kanemaru and colleagues,?Active Matrix, Si Field Emitters Driven By Built-in MOSFETS?, IDW?97, pp 735-738, 1997. Also, a thin film transistor can be used as an active circuit for each unit pixel in order to solve the above drawbacks, which is disclosed in the paper by H. Gamo et al., ?Actively-Controllable Field Emitter Arrays with Built-in Thin-Film Transistors on Glass for Active-Matrix FED Applications?, IDW’98, pp 66-770, 1998. The structures described in these papers are made more complex by adding processes to the fabrication of an existing field emission device.
“The present invention aims to provide a field emitter with a high current density at low voltages using a carbon nanotube material.
“Another objective is the present invention to provide a method for manufacturing a field emitter with a carbon nanotube films through a simple process.”
“Another objective of the present invention” is to provide a field emission device with a field emitter that has a high current density, even at low voltages using a carbon nanotube movie.
“The present invention provides a field emission device having a carbon nanotube layer. It also includes an insulating substrate and a thin film transistor. The thin film transistor has a semiconductor layer, drain electrode, and gate electrode.
“And an electron emitting unit made of a carbon-nanotube film at the drain is electrode for the thin film transistor.”
The semiconductor layer of a thin film transistor may be either a polycrystalline silicon silicon layer or an organic silicon layer. A thin film transistor could be either a coplanar-type transistor or a stagger type transistor.
“The drain electrode’s surface is intended to touch the carbon nanotube film. It contains catalytic metallic, which is a transition metal such as nickel and cobalt for growth of carbon nanotubes. The drain electrode can also be made of catalytic material for growing carbon nanotubes.
“The second objective is achieved by the present invention. The method of fabricating a field emitter with a carbon nanotube films, according to the present invention, includes:
The steps of creating a thin-film transistor consist of a semiconductor substrate, a source electrode and drain electrode. After etching the protective film, remove the remaining protective film. Next, form a semiconductor substrate layer. Form a source and drain electrode patterns that are separated by a predetermined distance on the semiconductor substrate. Finally, create a gate electro pattern between the source and drain electrode patterns. This gate electrode pattern consists of a gate insulation film and agate electrode. The step of making a thin film transistor is an inverse stagger-type transistor. It includes substeps such as: creating a source and drain electrode patterns that are separated by a predetermined distance on the insulating substrate; creating a semiconductor layer pattern that extends a predetermined length along the sides and filling the space between them; and finally, forming a pattern for a gate electrode consisting of a a gate insulating and gate electrode on the semiconductor pattern between the drain electrode and source electrode. The step of making a thin film transistor that is an inverse stagger type transistor involves the following substeps: Forming a gate-type electrode pattern, consisting of a source electrode and a barrier insulating film on the insulating substrate, and covering the gate electrode with a semiconductor layer. Finally, forming a source and drain electrode patterns on the semiconductor layer pattern.
The step of creating a carbon nanotube layer on the exposed part of the drain electro can be done by either coating the exposed area with a carbon-nanotube film that has been grown or directly growing the carbon Nanotube film on to the surface. The method also includes the formation of a catalytic layer to allow carbon nanotube growth on a portion that contacts the carbon nanotube films. The catalytic metal layer can be formed in the process of forming a thin film transistor, or after etching a portion of the protective insulation film.
The present invention is a field emission device that achieves the third objective. It includes a field emitting display device where unit pixels are defined by a plurality gate lines and a plurality data lines that cross at right angles. Each unit pixel also includes: A thin film transistor formed on an ininsulating substrate. The thin film transistor has a semiconductor layer, source electrode, and drain electrode. An upper electrode opposite the insulating substrate. A fluorescent material is formed on the bottom electrode.
“The present invention uses a carbon nanotube movie as an electron emitting unit for a field emission device. This allows for a simple manufacturing process to create a field emitter with a high current density at low voltages. Because it is driven by a thin-film transistor, a field emission display device with a uniform current density can be realized.
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