A thin film transistor substrate also known as a display device, a method of manufacturing a thin film transistor substrate and a method of making a display device the thin film transistor substrate comprising a substrate; an initial thin film transistor on the substrate, the first thin film transistor having an active first pattern and a gate electrode that is that is arranged to overlap at least a portion of the active pattern. Then there is another thin film transistor placed on the substrate, with the second transistor having an active pattern which comprises a number of protrusions that are located on the upper portion of the surface, and another gate electrode which is designed to be overlapping at least a portion of the second active pattern.

1. Field

Embodiments are based on the substrate of a thin film transistor as well as a display device that has the substrate of a thin film transistor, a method for making the substrate of a thin film transistor and a method of manufacturing the display device.

2. Description of Related Art

Transistors may be used in various electronic devices for different reasons. Transistors can be utilized for a variety of functions like switching device, driving device, photo sensing device or similar devices. They can also be used in different electronic circuits.

Among these transistors, among them, a CMOS thin film transistor may be equipped with a PMOS thin film transistor, and an NMOS thin film transistor. It may be advantageous in realizing diverse circuits and systems which aren’t possible to make using only a PMOS thin film transistor or an NMOS thin film transistor.

These embodiments are directed at a thin-film transistor substrate and a display device that has the substrate made of thin transistors, and manufacturing techniques to make the display device.

The embodiments can be made by using a thin film transistor substrate comprising a substrate; a first thin film transistor on the substrate the first transistor having a first active pattern, and a first gate electrodearranged to cover at least a portion of the first active pattern. There is also a second thin film transistor mounted on the substrate, with the second thin film transistor including a second active pattern that includes a plurality of protrusions located on the upper portion of the substrate, as well as an additional gate electrode that is arranged to cover at least a portion of the second active pattern.

One of the first thin-film transistors and the second transistor could be a P-type transistor. The second of the first transistors and the second transistor could be an N-type transistor.

A CMOS device can comprise the first and second thin film transistors.

The height of each one of the protrusions that are on the upper surface of the second active pattern can range from 200 .ANG. to about 800 .ANG..

The thin film transistor substrate may also have a gate insulating layer that is placed on the substrate wherein the gate insulating layer is between the first active pattern and the first gate electrode.

Two thin film transistors could be a driving transistor. Another thin film transistor could be a switching transistor.

The upper surface of the first pattern might be flat.

A plurality fine protrusions can be found on the upper surface of the first active pattern. The height of each fine protrusion may be around 100.ANG. or less.

The two active patterns might contain polysilicon.

The embodiments could be implemented by using display devices that include the film transistor substrate in accordance to an embodiment, a pixel electrode electrically connected to the first thin film transistor, or the second transistor on the thin film transistor substrate an emission layer placed on the pixel electrode; as well as a counter electrode placed over the emission layer.

The embodiments could be achieved by providing a method for fabricating a thin-film transistor substrate, comprising forming a first active pattern and an active second pattern on a substrate, creating a number of protrusions from the first on an upper surface of the first active pattern, and creating a number of second protrusions onto an upper portion of the second active pattern radiating a laser beam over the first active pattern and the second active pattern, forming a masking layeron the second active pattern in order to obscure the active pattern of the second taking away the numerous first protrusions on the exposed top of the first active pattern; making an initial gate electrode that overlaps at least parts of the active pattern that was first created; and making an additional gate electrode that overlaps at least parts of the second active pattern.

One active pattern of the active patterns and one of active patterns from the second active may be injected with P-type drugs, while the other active pattern as well as the second active could be doped with an N-type drug.

The method can also involve making a first thin-film transistor by doping the first active patterns with a first dopant; and forming a second thin film transistor by doping the second active pattern with a second dopant, wherein one of thefirst thin film transistors as well as the second thin film transistor is a PMOS transistor, and the other one of the first transistor as well as the second thin film transistor is an NMOS transistor.

The height of each one of the plurality of the first protrusions and the plurality of second protrusions can range between 200 .ANG. Around 800.ANG.

The method can also comprise creating a gate insulating layer on the substrate in which case the gate insulating layer is located between the active pattern that is first formed and the gate electrode that is first,

One of the first thin film transistors and the second transistor could be a driving transistor, and the other of the first thin film transistors and the second thin film transistor may be a switching transistor.

Removal of the first protrusions may include performing an etching process.

Removal of the numerous first protrusions may include performing the CMP process.

The elimination of the plurality, or first protrusions can be accomplished by forming a set of fine protrusions having the maximal height of 100.ANG. or less on the upper portion of the first active pattern.

These embodiments can be realized by providing a process for making display devices. This includes: forming a pixel electrode electrically connected to either the first thin movie transistor or to the second thin movie transistor substrate, making an intermediate layer over the electrode, with the intermediate layers comprising an emission layer, and finally, forming an counter electrode.

These particular and general features can be implemented by using a method, system or computer program, or a combination of the two.

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